This presentation was made at the 2019 NAFEMS World Congress in Quebec Canada
Next generation 5G networks will provide reliable high-speed data links between base stations and mobile devices. Base stations featuring antenna arrays with a large number of elements operating at high millimeter wave frequencies (e.g. 28 GHz) will use beam forming to allow efficient, targeted communication with mobile phone handsets. In the handsets themselves, the use of several small chip-integrated arrays in each device becomes feasible due to the small physical size of antennas at these high frequencies.
Spatial and material constraints make the integration of such antenna arrays into mobile phone handsets challenging. Chip based arrays may be accommodated below the back cover of the device, which, for high-end phones, may be made of metal or glass. A metal cover would act as a very effective shield, preventing communication entirely. Glass may allow electromagnetic energy to propagate through it, but its electrical thickness at high mm-wave frequencies may influence the array performance substantially.
This paper investigates approaches for the design of the back cover of a mobile phone when integrating a chip based antenna array by providing adequate scanning behavior across the frequency of interest. The methods and constraints described here will allow 5G antenna engineers to suggest mechanical and electrical designs that will work optimally to provide the efficient high data-rate connections that users require without sacrificing aesthetics and the tactile experience while handling the device.
The phone backing is treated here as a radome, and radome techniques commonly used in aerospace applications are applied. For dielectric materials, the enclosure design has to take into account the material properties and thickness of the cover. For the example of a metal-backed phone, a loaded radome incorporating a frequency selective surface (FSS) is designed and integrated in the phone cover, allowing electromagnetic radiation to pass in the frequency range of interest.
|Date||18th June 2019|
|Organisation||Dassault Systèmes Deutschland GmbH|